Multiscale modeling of semimetal contact to two-dimensional transition metal dichalcogenide semiconductor

A multiscale simulation approach is developed to simulate the contact transport properties between semimetal and a monolayer two-dimensional transition metal dichalcogenide (TMDC) semiconductor. The results elucidate mechanisms for low resistance TMDC semiconductor contacts from quantum perspective. compare favorably with recent experiments. Furthermore, show that of bismuth-MoS 2 can be further reduced by engineering dielectric environment doping material [Formula: see text]. indicates possibility achieve an ultrashort transfer length ?1 nm, which allow aggressive scaling size.